schottky barrier diode rb501v-40 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) low current rectification ? features 1) ultra small mold type. (umd2) 2) low i r 3) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io ma i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f 1 - - 0.55 v i f =100ma v f 2 - - 0.34 v i f =10ma reverse current i r --30 av r =10v capacitance between terminals ct - 6.0 - pf v r =10v , f=1mhz parameter forawrd voltage storage temperature ? 40 to ? 125 forward current surge peak (60hz ?1cyc) 1 junction temperature 125 reverse voltage (dc) 40 average rectified forward current 100 parameter limits reverse voltage (repetitive peak) 45 umd2 2.1 0.8min . 0.9min. 4.00.1 2.00.05 1.550.05 1.400.1 4.00.1 1.05 2.75 3.50.05 1.750.1 8.00.2 0.30.1 1.00.1 2.80.1 rohm : umd2 jeita : sc-90/a jedec : s0d-323 dot (year week factory) 0.30.05 0.70.2 0.1 0.10.1 0.05 1.70.1 2.50.2 1.250.1 1/3 2011.05 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb501v-40 0 5 10 15 20 25 30 forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) trr dispersion map forward voltage:vf(mv) vf dispersion map reverse recovery time:trr(ns) 0.01 0.1 1 10 100 0 100 200 300 400 500 600 0.01 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 35 1 10 100 0102030 f=1mhz 420 430 440 450 460 470 ave:439.5mv ta=25 if=100ma n=30pcs 260 270 280 290 300 310 ave:281.5mv ta=25 if=10ma n=30pcs 0 5 10 15 20 25 30 ta=25 vr=10v n=10pcs ave:2.548ua 0 5 10 15 20 ave:5.50a 8.3ms ifsm 1cyc ave:6.20ns 0 5 10 15 0.1 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 5 10 15 0.1 1 10 100 t ifsm 1 10 100 1000 0.001 0.1 10 1000 rth(j-a) rth(j-c) 1ms im=10ma if=100ma 300us time mounted on epoxy board ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs ta=-25 ta=125 ta=75 ta=25 ta=-25 ta=125 ta=25 ta=75 0 2 4 6 8 10 12 14 16 18 20 ave:5.81pf ta=25 f=1mhz ir=10v n=10pcs 2/3 2011.05 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb501v-40 forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.02 0.04 0.06 0.08 0.1 00.10.2 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0102030 0 0.05 0.1 0.15 0.2 0.25 0.3 0 25 50 75 100 125 0 0.05 0.1 0.15 0.2 0.25 0.3 0 25 50 75 100 125 dc d=1/2 sin(?180) sin(?180) dc d=1/2 sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=20v 0a 0v t tj=125 d=t/t t vr io vr=20v 0a 0v sin(?180) dc d=1/2 3/3 2011.05 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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